Samsung 4TB 990 EVO Plus PCIe 5.0 x2 M.2 Internal SSD


SKU: MC-SSD-SAM-0040 Category: Brand:

The Samsung 4TB 990 EVO Plus is a high-capacity internal SSD with a PCIe 5.0 x2 interface, offering sequential read speeds up to 7250 MB/s and write speeds up to 6300 MB/s. With NVMe 2.0 support and random IOPS up to 1.4 million, it delivers exceptional performance for gaming and creative workloads, backed by a 2400 TBW endurance rating.

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 170,000

Description

The Samsung 4TB 990 EVO Plus is a high-performance internal SSD that leverages the PCIe 5.0 x2 interface for blazing-fast data transfers, while also being backward compatible with PCIe 4.0 x4. With sequential read speeds up to 7250 MB/s and write speeds up to 6300 MB/s, this drive is ideal for demanding tasks such as gaming, content creation, and heavy multitasking.

Built on the NVMe 2.0 protocol, the 990 EVO Plus offers exceptional random read and write performance of up to 1,050,000 and 1,400,000 IOPS respectively, ensuring snappy responsiveness even under intense workloads. The drive also features advanced encryption options including AES 256-bit, TCG/Opal v2.0, and MS eDrive (IEEE1667) for data security.

  • 4TB capacity in a compact M.2 2280 form factor
  • PCIe 5.0 x2 interface with backward compatibility to PCIe 4.0 x4
  • Sequential read up to 7250 MB/s and write up to 6300 MB/s
  • Random read up to 1,050,000 IOPS and write up to 1,400,000 IOPS
  • Endurance rated at 2400 TBW for long-lasting reliability
  • Supports AES 256-bit encryption, TCG/Opal v2.0, and MS eDrive

Specification

Overview

Capacity
Interface
Form Factor
Warranty1 Year
BrandSAMSUNG
Series990 EVO Plus
ModelMZ-V9S4T0B/AM
Device TypeInternal Solid State Drive
Used ForConsumer
ProtocolNVMe 2.0
EncryptionClass 0 , TCG/Opal v2.0, MS eDrive
Max Sequential ReadUp to 7250 MBps
Max Sequential WriteUp to 6300 MBps
4KB Random ReadUp to 1,050,000 IOPS
4KB Random WriteUp to 1,400,000 IOPS
Terabytes Written (TBW)2400TB
Power Consumption (Active)5.5W / 4.8W

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