Samsung 2TB 990 PRO PCIe 4.0 x4 M.2 Internal SSD with Heatsink


SKU: MC-SSD-SAM-0064 Category: Brand:

The Samsung 2TB 990 PRO PCIe 4.0 x4 M.2 Internal SSD with Heatsink is a high-performance internal solid-state drive offering 2TB capacity, sequential read speeds up to 7450 MB/s, and write speeds up to 6900 MB/s. Featuring PCIe Gen 4.0 interface, NVMe 2.0 protocol, and Samsung V7 V-NAND technology, it ensures fast data access and reliability. The integrated heatsink helps maintain optimal temperatures during intensive tasks.

Shipping & Delivery

  • Pick up from the Megacomputer Store

  To pick up today

Free

  • Express delivery

Applicable to selected areas in Karachi only

1-2 Days

  • TCS Courier delivery

Our courier partner will deliver to your specified address

Delays may occur due to situations out of our control

3-4 Days

 100,000

Description

The Samsung 2TB 990 PRO PCIe 4.0 x4 M.2 Internal SSD with Heatsink delivers cutting-edge performance for demanding workloads. With sequential read speeds up to 7450 MB/s and write speeds up to 6900 MB/s, it leverages PCIe Gen 4.0 and NVMe 2.0 for lightning-fast data transfers.

Built with Samsung’s V7 V-NAND 3-bit MLC and a proprietary controller, this drive offers AES 256-bit encryption and TCG/Opal support for enhanced security. The integrated heatsink ensures sustained performance under heavy loads, making it ideal for gaming, content creation, and professional use.

  • 2TB capacity in M.2 2280 form factor for compact builds
  • PCI-Express Gen 4.0 x4 interface with NVMe 2.0 protocol
  • Max sequential read: 7450 MB/s; write: 6900 MB/s
  • V7 V-NAND 3-bit MLC memory components for reliability
  • AES 256-bit encryption (Class 0) and TCG/Opal IEEE1667 support
  • Integrated heatsink for thermal management

Specification

Overview

Interface
Form Factor
Capacity
Warranty1 Year
Best Seller Ranking#27 in Internal SSDs
BrandSAMSUNG
Series990 PRO w/ Heatsink Normal Package
ModelMZ-V9P2T0CW
Device TypeInternal Solid State Drive
Used ForConsumer
Memory ComponentsV7 V-NAND 3bit MLC
ProtocolNVMe 2.0
ControllerSamsung
EncryptionAES 256-bit Encryption, TCG/Opal IEEE1667
Max Sequential ReadUp to 7450 MBps
Max Sequential WriteUp to 6900 MBps

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