Samsung 250GB 970 EVO Plus NVMe M.2 Internal SSD
The Samsung 250GB 970 EVO Plus NVMe M.2 Internal SSD offers blazing-fast speeds with sequential reads up to 3500 MB/s and writes up to 2300 MB/s, making it ideal for gaming and content creation. Its V-NAND MLC technology and 512 MB buffer ensure reliable performance, while 256-bit AES encryption protects your data. Available with nationwide delivery and cash-on-delivery across Pakistan.
Shipping & Delivery
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Pick up from the Megacomputer Store
To pick up today
Free
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Express delivery
Applicable to selected areas in Karachi only
1-2 Days
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TCS Courier delivery
Our courier partner will deliver to your specified address
Delays may occur due to situations out of our control
3-4 Days
₨ 10,990
Description
The Samsung 250GB 970 EVO Plus NVMe M.2 Internal SSD delivers exceptional performance for demanding applications. With sequential read speeds up to 3500 MB/s and write speeds up to 2300 MB/s, this drive significantly reduces load times for games, creative software, and everyday computing tasks.
Built on Samsung’s V-NAND 3-bit MLC technology and featuring a 512 MB buffer, the 970 EVO Plus offers enhanced endurance with 150 TB total bytes written and a 1.5 million hour MTBF. The M.2 2280 form factor fits seamlessly into modern laptops and desktops, while 256-bit AES hardware encryption keeps your data secure.
- Sequential read speeds up to 3500 MB/s and write speeds up to 2300 MB/s
- Random read 250,000 IOPS and random write 550,000 IOPS (4 KB files)
- 512 MB buffer for improved multitasking performance
- Endurance rating of 150 TB total bytes written
- 256-bit AES hardware encryption for data security
- Supports S.M.A.R.T. and TRIM for optimized reliability
Specification
Overview
| Form Factor | M.2 2280 |
|---|---|
| Capacity | 250GB |
| Interface | NVMe PCIe 4.0 |
| Warranty | 1 Year |
| Buffer | 512 MB |
| Write Speed | Random: 550,000 IOPS 4 KB Files, Sequential: 2300 MB/s |
| Read Speed | Random: 250,000 IOPS 4 KB Files, Sequential: 3500 MB/s |
| Drive Type | SSD |
| Flash Controller | Samsung V-NAND 3-Bit MLC |
| Flash Memory Type | Multi-Level Cell |
| SMART Support | Yes |
| TRIM Support | Yes |
| Encryption | 256-Bit AES Hardware Encryption |
| Endurance (Total Bytes Written) | 150 TB |
| Mean Time Between Failures (MTBF) | 1.5 Million Hours |
| Power Draw | 5.0 W, 8.0 W |
| Supported Voltage | 3.3 VDC |
| Operating Shock | 1500 G / 0.5 ms |
| Operating Temperature | 32 to 158°F / 0 to 70°C |
| Dimensions (W x H x D) | 3.16 x 0.87 x 0.09″ / 80.2 x 22.2 x 2.4 mm |
| Weight | 0.28 oz / 8 g |
| Package Weight | 0.17 lb |
| Box Dimensions (LxWxH) | 5.65 x 3.9 x 0.85″ |
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